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微电子制造学报
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Journal of Microelectronic Manufacturing (JoMM）是由中国科学院微电子研究所、国科大微电子学院联合创办的国际全英文学术期刊，旨在发表集成电路制造领域中从基础研究阶段到工业大规模量产阶段的研究成果，内容包括但不限于Design、Process、Metrology & Yield Control、Packaging、Materials、Equipmen...
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主办单位：
中国科学院微电子研究所
ISSN：
2578-3769
CN：
出版周期：
季刊
邮编：
100029
地址：
出版文献量（篇）
47
总下载数（次）
0
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目录
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摘要： Double-sided nanostructure has more excellent properties in high efficiency,high yield,and high...
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摘要： Source and mask joint optimization(SMO)is a widely used computational lithography method for st...
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3. Silicon Nitride Etch via Oxidation Reaction in Fluorocarbon/Oxygen Plasma:A First-Principle Study摘要： Conducting all-in-one etch process for 3D-NAND fabrication requires close etch rate(E/R)for SiO...
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4. A Novel High Volume Manufacturing Method for Defect-free and High-yield SiN Micro-sieve Membranes摘要： Micro-sieves have been widely used in medical treatment,quarantine,environment,agriculture,phar...
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摘要： This paper summarizes the status of the plasma etch process modeling research.It mainly introdu...
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摘要： China's IC industry has been flourishing in recent years,huge market demand together with gover...
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摘要： Photolithography has been a major enabler for the continuous shrink of the semiconductor manufa...
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摘要： Pursuing small critical dimensions(i.e.14 nm or below)and high integration bring us lots of phy...
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摘要： Laser-driven light sources(LDLS)have ultrahigh-brightness and broad wavelength range.They are i...
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摘要： Based on the analysis of the existing hard IP core testing technology, the hard IP core nondest...
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摘要： Editorial Introduction: China's IC industry has been flourishing in recent years, huge market d...
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摘要： This paper proposed a flexible pressure sensor based on poly(dimethylsiloxane) nanostructures f...
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摘要： Ferromagnetic films of L10-ordered MnGa have shown promise not only in the applications in ultr...
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摘要： Editorial Introduction: China's IC industry has been flourishing in recent years,huge market de...
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摘要： With the continuous scaling of integrated circuit technologies,design for manufacturability(DFM...
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摘要： This paper presents a dual micro-power 150mA ultra LDO CMOS regulator,which is designed for hig...
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摘要： 3D NAND(three-dimensional NAND type)has rapidly become the standard technology for enterprise f...
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摘要： Directed Self-Assembly(DSA)of block copolymers(BCPs)is a promising technique for sub-10 nm nano...
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摘要： In 5 nm technology node,FinFET device performance is sensitive to the dimension of the device s...
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摘要： 5 nm logic technology node is believed to be the first node that will adopt Extremely Ultra-Vio...
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摘要： In traditional 3D NAND design,peripheral circuit accounts for 20-30%of the chip realestate,whic...
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摘要： As the IC manufacturing enter sub 20nm tech nodes,DFM become more and more important to make su...
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摘要： 3D NAND technical development and manufacturing face many challenges to scale down their device...
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摘要： 5 nm logic process is the current leading-edge technology which is under development in world-w...
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摘要： Editorial Introduction:China's IC industry has been flourishing in recent years,huge market dem...
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摘要： Fin field-effect transistor(FinFET)technology has been introduced to the mainstream complementa...
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摘要： On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(...
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摘要： Editorial Introduction:China's IC industry has been flourishing in recent years,huge market dem...
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摘要： The Atomic Layer Deposition process(ALD)is widely used in FinFET,3D-NAND and other important te...
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30. Recent Progress of the Integrated Circuit Industry in China―Overview of the Manufacturing Industry摘要： Editorial Introduction:China's IC industry has been flourishing in recent years,huge market dem...
微电子制造学报基本信息
| 刊名 | 微电子制造学报 | 主编 | 叶天春 |
| 曾用名 | |||
| 主办单位 | 中国科学院微电子研究所 | 主管单位 | 中国科学院 |
| 出版周期 | 季刊 | 语种 | |
| ISSN | 2578-3769 | CN | |
| 邮编 | 100029 | 电子邮箱 | jomm@jommpublish.org |
| 电话 | 010-829957 | 网址 | |
| 地址 | 北京市北土城西路3号中科院微电子研究所 |
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