Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2009,（5）
• 页码范围: 106-109
• 页数: 4页
• 语种: 英文

摘要

A novel integratable and high speed InGaAsP multi-quantum well (MQW) complex-coupled distributed feedback (DFB) laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26 mA, a slope efficiency of 0. 14 W.A-1 and a side mode suppression ratio of 40 dB together with a 3 dB bandwidth of more than 8 GHz. The device is suitable for 10 Gbit/s optical fiber communication.