Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications

• 作者: Masoud Sabaghi Maziyar Niyakan Lahiji Mehdi Rahnama Seyed Reza Hadianamrei
• 来源期刊: 通讯、网络与系统学国际期刊(英文)
• 学科: 工学
• 关键词: ADS CLASS F Power AMPLIFIER LD MOS WCDMA
• 年，卷（期）: 2011,（10）
• 页码范围: 662-666
• 页数: 5页
• 分类号: TN7

摘要

The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.