Structure and electrical properties of PZT/LNO/PT multilayer films on stainless steel substrates

• 来源期刊: 稀有金属(英文版)
• 学科: 工学
• 年，卷（期）: 2012,（3）
• 页码范围: 272-275
• 页数: 4页
• 分类号: TG174.44
• 语种: 中文

摘要

PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effectively decreased the annealing temperature of LNO layer from 750 C to 650 C. X-ray diffraction (XRD) reveals that LNO layers with PT layer crystallize into a perovskite phase on annealing at 650 C for 10 min. PZT deposited on LNO buffer layer with PT seed layer exhibits good ferroelectric property.