Calibration of GaAlAs Semiconductor Diode

• 作者: S. B. Ota Smita Ota
• 来源期刊: 现代物理(英文)
• 学科: 工学
• 关键词: SEMICONDUCTOR TEMPERATURE SENSORS GAALAS
• 年，卷（期）: 2012,（10）
• 页码范围: 1490-1493
• 页数: 4页
• 分类号: TN3

摘要

The forward voltage of GaAlAs semiconductor diode has been measured in the temperature range 50 K - 300 K and for current values between 10 nA and 450 μA. The forward voltage as a function of temperature is least-squares fitted and the coefficients are given. The 1st and 2nd order least-squares fitting has high temperature root between 400 K and 950 K. The presence of the high temperature root indicates that the fitted polynomials are of similar character. The high temperature root is found to increase for the least squares fitted polynomials corresponding to higher current values.