Angular Effects of Heavy-Ion Induced Single-Event Upset Response for Flip-Chip Packaged SRAM Device in 14 nm Bulk FinFET Technology

• 作者: Liu Jie Mo Lihua Ye Bing Zhang Zhangang
• 来源期刊: 中国科学院近代物理研究所和兰州重离子研究装置年报:英文版
• 学科: 工学
• 关键词: FINFET COMS BULK
• 年，卷（期）: 2018,（1）
• 页码范围: 117-118
• 页数: 2页
• 分类号: TN3

摘要

Compared with COMS planar technology,FinFET technology has more obvious advantages in advanced nanoscale devices,which provides the possibility of continuous advancement of Moore’s Law.FinFET process devices have attracted extensive attention in the radiation resistance field,especially in single-event effects(SEEs).Due to the particularity of structure for 3D FinFET devices,effect from the angle of incidence is an important factor to be taken into account.