Optical Properties of GaN Irradiated with Swift Heavy Ions

• 作者: Chen Xiaoxu Ding Zhaonan Song Yin Yang Yitao Zhang Chonghong Zhang Xianlong
• 来源期刊: 中国科学院近代物理研究所和兰州重离子研究装置年报:英文版
• 学科: 工学
• 关键词: temperature. SCATTERING GAN
• 年，卷（期）: 2018,（1）
• 页码范围: 126-127
• 页数: 2页
• 分类号: TN3

摘要

In the past decade,III-V semiconductor material such as gallium phosphide(GaP),gallium nitride(GaN)and related nitride compounds,have been developing very rapidly due to their wide range of applications.Ion beams were proven to be an efficient method to modify the structure and properties of the materials.In the present work,lattice defects produced in GaN crystal by 350 MeV 56Fe21+ions were characterized by using various methods including Raman scattering,XRD and photoluminescence(PL)spectrometry at room temperature.