Monitoring of SiC MOSFET Junction Temperature with On-state Voltage at High Currents

• 来源期刊: 中国电气工程学报（英文）
• 年，卷（期）: 2020,（3）
• 所属期刊栏目: Letters
• 页码范围: 1-7
• 页数: 7页
• 语种: 英文
• DOI: 10.23919/CJEE.2020.000014

摘要

A junction temperature monitoring method has been presented based on the on-state voltage at high currents.With a simplified physical model,this method mapped the relationship between junction temperature and on-state voltage.The tough calibration and signal sensing issues are solved.Verified by body-diode voltage detecting method,the presented method shows a good performance and high accuracy,in the meantime,it would not change the modulation strategy and topology of the converter.