Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate

• 作者: Yuan-Hao He Wei Mao Ming Du Zi-Ling Peng Hai-Yong Wang Xue-Feng Zheng Chong Wang Jin-Cheng Zhang Yue Hao
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（5）
• 所属期刊栏目: INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 776-783
• 页数: 8页
• 语种: 英文
• DOI: 10.1088/1674-1056/abd73f

摘要

A novel vertical InN/InGaN heterojunction tunnel FET with hetero T-shaped gate as well as polarization-doped source and drain region (InN-Hetero-TG-TFET) is proposed and investigated by Silvaco-Atlas simulations for the first time.Com-pared with the conventional physical doping TFET devices,the proposed device can realize the P-type source and N-type drain region by means of the polarization effect near the top InN/InGaN and bottom InGaN/InN heterojunctions respec-tively,which could provide an effective solution of random dopant fluctuation (RDF) and the related problems about the high thermal budget and expensive annealing techniques due to ion-implantation physical doping.Besides,due to the hetero T-shaped gate,the improvement of the on-state performance can be achieved in the proposed device.The simulations of the device proposed here in this work show ION of 4.45 × 10-5 A/μm,ION/IoFF ratio of 1013,and SSavg of 7.5 mV/dec in InN-Hetero-TG-TFET,which are better than the counterparts of the device with a homo T-shaped gate (InN-Homo-TG-TFET)and our reported lateral polarization-induced InN-based TFET (PI-InN-TFET).These results can provide useful reference for further developing the TFETs without physical doping process in low power electronics applications.