Spontaneous ferromagnetism and magnetoresistance hysteresis in Ge1-xSnx alloys

• 作者: Ben-Chuan Lin Xing-Guo Ye Nan Wang Cai-Xin Zhang Hui-Xiong Deng Jing-Zhi Fang Hao-Nan Cui Shuo Wang Jian Liu Zhongming Wei Dapeng Yua Zhi-Min Liao Chunlai Xue
• 来源期刊: 科学通报（英文版）
• 年，卷（期）: 2021,（14）
• 所属期刊栏目: SHORT COMMUNICATIONS
• 页码范围: 1375-1378
• 页数: 4页
• 语种: 英文

摘要

Introducing ferromagnetism into non-magnetic systems without the participation of magnetic elements is promising for all-electric spintronic devices[1,2].Many approaches have been pursued,such as non-magnetic defects induced magnetization in layered materials[3-5]or the inversion symmetry breaking induced magnetization in magic-angle bilayer graphene[6-8],etc.However,these approaches have to tackle with the localization effects or the inevitable precise control of twist angle,which hinders the future application into large-scale spintronic information devices.Theorists also predicted that the spontaneous ferromagnetism could emerge in the quasi-2D crystals[9]like GaSe,but no experimental results have been reported.Here,we report the spontaneous ferromagnetism induced by van Hove singularity[9-13]in non-magnetic group IV Ge1-xSnx alloys grown by the molecular beam epitaxy(MBE)technique.Our findings experimentally open up an opportunity to realize spintron-ics in group IV semiconductors.