Defects Induced by Fast Neutron Irradiation in GaAs

• 来源期刊: 原子核物理：英文版
• 学科: 物理学
• 关键词: —CaAs 5 and 9.5 MEV FAST neutrons DEFECTS POSITRON LIFETIME
• 年，卷（期）: 1996,（4）
• 页码范围: 231-235
• 页数: 5页
• 分类号: O4

摘要

【正】 Defects induced by 5 and 9.5 MeV fast neutron irradiations in N-type HB single crystal GaAsare studied by the positron annihilation lifetime technique.Mono-and di-vacancies are created for the neu-tron irradiation to a fluence of 10¹³ n/cm² and only rnono-vacancies are produced for the neutron irradia-tion to a fluence of 10¹¹～10¹²n/cm².It is found that the higher the irradiating neutron energy and flu-ence,the higher the intensity of the produced defects.As a result the defect production rate becomes in-creasingly more sensitive to the neutron fluence than to the neutron energy.The annealing behavior of thedefects is also investigated up to 750℃.Tri-vacaneies are formed between 450 and 620℃ in GaAs irra-diated to 10¹³ n/cm² by 9.5 MeV neutrons.Three annealing stages are observed for the mono-,di-andtri-vacancies.