Designing Parameters for RF CMOS Cells

• 作者: G. Singh K. S. Yadav Viranjay M. Srivastava
• 来源期刊: 电路与系统(英文)
• 学科: 医学
• 关键词: CMOS Cell Library Contact RESISTANCE DG MOSFET DP4T SWITCH Potential BARRIER Radio Frequency RF SWITCH RESISTANCE of MOS Voltage-Current CURVE VLSI
• 年，卷（期）: dlyxtyw,（2）
• 页码范围: 49-53
• 页数: 5页
• 分类号: R73

摘要

In this paper, we have investigated the design parameters of RF CMOS cells which will be used for switch in the wireless telecommunication systems. This RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. The results for the development of a cell-library which includes the basics of the circuit elements required for the radio frequency sub-systems of the integrated circuits such as V-I characteristics at low-voltages, contact resistance which is present in the switches and the potential barrier with contacts available in devices has been discussed.