Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs

• 作者: Hayao Kasai Takuya Oikawa Tohru Nakamura Tomoyoshi Mishima
• 来源期刊: 材料科学与化学工程(英文)
• 学科: 医学
• 关键词: GAN MISFET Mg Ion IMPLANTATION THRESHOLD VOLTAGE
• 年，卷（期）: clkxyhxgcyw_2017,（1）
• 页码范围: 48-53
• 页数: 6页
• 分类号: R73

摘要

This paper demonstrates that threshold voltages of GaN MISFET are controlla-ble by varying the Mg ion doses for Mg ion implantation. Furthermore, it de-monstrates for the first time that the short channel effect can be suppressed using a halo structure that has a p-layer in channel regions adjacent to source/ drain regions using tilt ion implantation. A device with a Mg dose of 8 × 1013/cm2 achieved maximum drain current of 240 mA/mm and a transconductance of 40 mS/mm. These results indicate a definite potential for the use of our new process in GaN MISFETs for applications in power switching devices.