Ultra-thin Body Buried In0.35Ga0.65As Channel MOSFETs with Extremely Low Off-current on Si Substrates

• 作者: WANG Bo DING Peng FENG Ruize WANG Yanfu LIU Xiaoyu SUN Tangyou CHEN Yonghe LIU Xingpeng LI Qi LI Yue LIU Yingbo YIN Yihui ZHAO Hao ZHANG Wei LI Haiou JIN Zhi
• 来源期刊: 电子学报（英文版）
• 年，卷（期）: 2021,（6）
• 所属期刊栏目: COMPUTERS AND MICROELECTRONICS
• 页码范围: 1017-1021
• 页数: 5页
• 语种: 英文
• DOI: 10.1049/cje.2021.07.024

摘要

In this paper, we investigated the electrical properties of the Metal-oxide-semiconductor gate stack of Ti/Al2O3/InP under different annealing conditions. A minimum interface trap density of 3×1011cm?2eV?1 is obtained without postmetallization annealing treatment. Additionally, utilizing Ti/Al2O3/InP MOS gate stack, we fabricated ultra-thin body buried In0.35Ga0.65As channel MOSFETs on Si substrates with optimized on/off trade-off. The 200nm gate length device with extremely low off-current of 0.6nA/μm, and on-off ratio of 3.3×105, is demonstrated by employing buried low indium (In0.35Ga0.65As) channel with InP barrier/spacer device structure, giving strong potential for future high-performance and low-power applications.