Ultra wideband CMOS digital T-type attenuator with low phase errors

• 作者: Chao Fan Yahua Ran Liqun Ye
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2022,（3）
• 所属期刊栏目: ARTICLES
• 页码范围: 55-57
• 页数: 3页
• 语种: 英文
• DOI: 10.1088/1674-4926/43/3/032401

摘要

A proposed inductive-phase-compensation ultra wideband CMOS digital T-type attenuator design based on an analys-is of minimising phase errors is presented in this letter.In a standard CMOS technology,the proposed attenuator is analytically demonstrated to have low phase errors due to the inductive-phase-compensation network.A design equation is inferred and a wide-band 4dB attenuation bit digital attenuator with low phase errors is designed as a test vehicle for the proposed ap-proach.