Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation

• 作者: Chiaya Yamamoto Haruo Nakazawa Junji Yamanaka Kazuki Kamimura Keisuke Arimoto Kiyokazu Nakagawa Mai Shirakura Masaaki Ogino Masaaki Tachioka Tetsuji Arai Toshiyuki Takamatsu
• 来源期刊: 材料科学与化学工程(英文)
• 学科: 化学
• 关键词: SELECTIVE Heating Nickel SILICIDE Electrode HYDROGEN Plasma Ohmic Contact SiC
• 年，卷（期）: 2017,（1）
• 页码范围: 35-41
• 页数: 7页
• 分类号: O6

摘要

We developed an apparatus for producing high-density hydrogen plasma. We confirmed that the temperatures of transition-metal films increased to above 800?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of W/Ni films deposited on n+4H-SiC wafers and formed nickel silicide electrodes. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability.