Evaluation of SEU Sensitivity in Radiation Hardened FPGA

• 作者: Cai Chang He Ze Li Dongqing Liu Jie Liu Tianqi Mo Lihua Sun Youmei Ye Bing Zhao Peixiong
• 来源期刊: 中国科学院近代物理研究所和兰州重离子研究装置年报:英文版
• 学科: 物理学
• 关键词: ELECTROSTATIC CHARGES chosen
• 年，卷（期）: 2018,（1）
• 页码范围: 114-114
• 页数: 1页
• 分类号: O57

摘要

In our work,the presentative configuration memory(CM)with dual interlocked storage cell and(DICE)hardened in CMOS-based 65 nm FPGA were chosen for heavy-ion evaluation.CM adopting DICE hardened structure controlled the whole routing and logical resources in FPGA is the most essential parts in radiation hardened design.For basic CMOS FPGAs,the ionizing particles can momentarily generate charges and short-circuit transistor’drain to substrate,leading node transition and initial data upset.However,DICE cell indicates that energy deposition must affect the interlocked two logics and change the electrostatic potentials in two bi-stable circuits synchronously[1].