Amorphous Latent Track in β-Ga2O3 Induced by Swift Heavy Ions

• 作者: Ai Wensi Hu Peipei Li Zongzhen Liu Jie Liu li Nan Shuai Sun Youmei Xu Lijun Zeng Jian Zhai Pengfei Zhang Shengxia
• 来源期刊: 中国科学院近代物理研究所和兰州重离子研究装置年报:英文版
• 学科: 工学
• 关键词: GA2O3 LATENT SWIFT
• 年，卷（期）: 2018,（1）
• 页码范围: 118-118
• 页数: 1页
• 分类号: TN3

摘要

Gallium oxide(Ga2O3),an ultra-wide bandgap semiconductor material,is attracting great interest for power devices,solar cells and ultraviolet detectors.The study of radiation damage effects is of importance for the application of Ga2O3 in harsh environment.In this work,it is the first time to observe the amorphous latent track of Ga2O3 single crystal by TEM.TEM images display that the mean diameters of amorphous latent tracks are 7.4,7.5 and 8.7 nm in Ga2O3 lamella samples irradiated by Ta ions with energy of 1786,1388 and 829 MeV,respectively.The latent track size meaured by TEM in this work is consisent with that measured by XRD in previous study[1].