Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications

• 作者: Fei Hou Feibo Du Juin J.Liou Wenqiang Song Zhiwei Liu
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2020,（9）
• 所属期刊栏目: INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 630-635
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/ab9de6

摘要

A robust electron device called the enhanced gated-Node-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/24-V BCD process.The proposed EGDTSCR is constructed by adding two gated diodes into a conventional ESD device called the modified lateral silicon-controlled rectifier (MLSCR).With the shunting effect of the surface gated diode path,the proposed EGDTSCR,with a width of 50 μm,exhibits a higher failure current (i.e.,3.82 A) as well as a higher holding voltage (i.e.,10.21 V) than the MLSCR.

作者信息

序号	姓名	单位	发文数	被引次数	H指数	G指数
1	Wenqiang Song		1	0	0.0	0.0
2	Fei Hou		1	0	0.0	0.0
3	Feibo Du		1	0	0.0	0.0
4	Zhiwei Liu		1	0	0.0	0.0
5	Juin J.Liou		1	0	0.0	0.0