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摘要:
Solar-blind deep-ultraviolet (DUV) photodetectors based on Ga2O3 have attracted great attention due to their potential applications for many military and civil purposes.However,the development of device integration for optoelectronic system applications remains a huge challenge.Herein,we report a facile method for patterned-growth of high-quality β-Ga2O3 thin films,which are assembled into a photodetectors array comprising 8 × 8 device units.A representative detector exhibits outstanding photoresponse performance,in terms of an ultra-low dark current of~0.62 pA,a large Ilight/Idark ratio exceeding 104,a high responsivity of ~0.72 A W-1 and a decent specific detectivity of ~4.18 × 1011 Jones,upon 265 nm DUV illumination.What is more,the DUV/visible (250/400 nm) rejection ratio is as high as 103 with a sharp response cut-offwavelength at ~280 nm.Further optoelectronic analysis reveals that the photodetectors array has good uniformity and repeatability,endowing it the capability to serve as a reliable DUV light image sensor with a decent spatial resolution.These results suggest that the proposed technique offers an effective avenue for patterned growth of β-Ga2O3 thin films for multifunctional DUV optoelectronic applications.
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篇名 Patterned growth of β-Ga2O3 thin films for solar-blind deep-ultraviolet photodetectors array and optical imaging application
来源期刊 材料科学技术(英文版) 学科
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年,卷(期) 2021,(13) 所属期刊栏目
研究方向 页码范围 189-196
页数 8页 分类号
字数 语种 英文
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材料科学技术(英文版)
月刊
1005-0302
21-1315/TG
大16开
沈阳市沈河区文化路72号
1985
eng
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5046
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14307
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