Investigation on the passivation,band alignment,gate charge,and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation

• 作者: Lixing Zhou Jinjuan Xiang Xiaolei Wang Wenwu Wang
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2022,（1）
• 所属期刊栏目: REVIEWS
• 页码范围: 43-54
• 页数: 12页
• 语种: 英文
• DOI: 10.1088/1674-4926/43/1/013101

摘要

Ge has been an alternative channel material for the performance enhancement of complementary metal-oxide-semiconductor (CMOS) technology applications because of its high carrier mobility and superior compatibility with Si CMOS technology.The gate structure plays a key role on the electrical property.In this paper,the property of Ge MOSFET with Al2O3/GeOx/Ge stack by ozone oxidation is reviewed.The GeOx passivation mechanism by ozone oxidation and band align-ment of Al2O3/GeOx/Ge stack is described.In addition,the charge distribution in the gate stack and remote Coulomb scatter-ing on carrier mobility is also presented.The surface passivation is mainly attributed to the high oxidation state of Ge.The en-ergy band alignment is well explained by the gap state theory.The charge distribution is quantitatively characterized and it is found that the gate charges make a great degradation on carrier mobility.These investigations help to provide an impressive un-derstanding and a possible instructive method to improve the performance of Ge devices.