Lateral β-Ga2O3 Schottky barrier diode fabricated on(-201)single crystal substrate and its temperature-dependent current-voltage characteristics

• 作者: Pei-Pei Ma Jun Zheng Ya-Bao Zhang Xiang-Quan Liu Zhi Liu Yu-Hua Zuo Chun-Lai Xue Bu-Wen Cheng
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2022,（4）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAG-NETIC, AND OPTICAL PROPERTIES
• 页码范围: 717-720
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/1674-1056/ac2729

摘要

Lateral β-Ga2O3 Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-type β-Ga2O3 single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes on both sides of the conductive channel,the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of 4.7 mΩ·cm2.Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20℃to 150℃.These results suggest that the lateralβ-Ga2O3 SBD has a tremendous potential for future power electronic applications.