Growth Optimization, Strain Compensation and Structure Design of InAs/GaSb Type-II Superlattices for Mid-Infrared Imaging

• 作者: Amir Karim Carl Asplund Hedda Malm Jun Shao Rickard Marcks von Würtemberg Shumin Wang Xiang Lu Yuxin Song
• 来源期刊: 晶体结构理论与应用(英文)
• 学科: 工学
• 关键词: INAS/GASB TYPE-II Superlattce Molecular Beam EPITAXY Strain COMPENSATION
• 年，卷（期）: 2013,（2）
• 页码范围: 46-56
• 页数: 11页
• 分类号: TN3

摘要

InAs/GaSb type-II superlattce (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature and group-V soaking times were optimized with respect to interface and transport quality. Novel strain compensation schemes with insertion of InSb layers were proposed and tested to be efficient to tune the overall strain between tensile and compressive without degradation of interface and optical quality. The effect of the proposed methods is modeled by analytic functions.? Band structure calculations were also carried out for the proposed T2SL structures to assist optimizing sample designs. Single pixel photodiodes with a low dark current were demonstrated.