Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips

• 作者: Yasuhisa Omura Yukio Iida
• 来源期刊: 电路与系统(英文)
• 学科: 医学
• 关键词: RF-ID Schenkel CIRCUIT SOI-MOSFET Quasi-Diode LOW-POWER
• 年，卷（期）: dlyxtyw,（2）
• 页码范围: 173-180
• 页数: 8页
• 分类号: R73

摘要

The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost-up efficiency for d. c. condition and a. c. condition are proposed and are examined by simulations. It is shown that the SOI-MOSFET-based quasi-diode is a promising device for the Schenkel circuit because high boost-up efficiency can be gained easily. An a. c. analysis indicates that the fully-depleted condition should hold to suppress the floating-body effect for GHz-level RF applications of a quasi-diode.