Vertical GaN Shottky barrier diode with thermally stable TiN anode

• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（3）
• 所属期刊栏目: INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 541-545
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/abc547

摘要

Vertical GaN Schottky barrier diodes with TiN anodes were fabricated to investigate the electrical performance.The turn-on voltage and specific on-resistance of diodes are deduced to be approximately 0.41 V and 0.98 mΩ·cm2,respectively.The current-voltage curves show rectifying characteristics under different temperatures from 25 ℃ to 200 ℃,implying a good thermal stability of TiN/GaN contact.The low-frequency noise follows a 1/f behavior due to the multiple traps and/or barrier inhomogeneous at TiN/GaN interface.The trapping/de-trapping between traps and Fermi level causes the slight capacitance dispersion under reverse voltage.