Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices

• 作者: Xiaoxing Ke Yong Zhang
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2022,（4）
• 所属期刊栏目: EDITORIAL
• 页码范围: 13-14
• 页数: 2页
• 语种: 英文
• DOI: 10.1088/1674-4926/43/4/040101

摘要

Characterization of materials and devices is fundamental to the understanding of structure-property relationship and im-proving device performance.Driven by the rapid progress achieved in semiconductors research,advanced characteriza-tion techniques at high spatial resolution are being de-veloped,with the capability to reveal microstructures down to atomic or sub-atomic scale.Coupled with in-situ and in-op-erando techniques,responses of materials and devices under multiple external stimuli can be investigated at both high spa-tial resolution and high time resolution,providing in-depth un-derstanding of the growth,reaction,defects evolution and de-gradation mechanism etc.with unprecedented details.