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摘要:
Temperature and doping dependencies of the transport properties have been calculated using an ensemble Monte Carlo simulation. We consider the polar optical phonon, acoustic phonons, piezoelectric, intervalley scatterings and Charged impurity scattering model of Ridley;furthermore, a non nonparabolic three-valley model is used. Our simulation results have shown that the electron velocity in GaN is less sensitive to changes in temperature than that associated with GaAs. Also it is found that GaN exhibits high peak drift velocity at room temperature, 2.8 × 105m/s, at doping concentration of 1 × 1020 m–3and the electron drift velocity relaxes to the saturation value of 1.3 × 105 m/s which is much larger than that of GaAs. The weakening of the phonon emission rate at low temperature explains the extremely high low field mobility. Our results suggest that the transport characteristics of GaN are superior to that of GaAs, over a wide range of temperatures, from 100 K to 700 K, and doping concentrations, up to 1 × 1025 m–3
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NEA GaN和GaAs光电阴极的比较
GaN光电阴极
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篇名 Temperature and Doping Dependencies of the Transport Properties within GaN and GaAs
来源期刊 现代物理(英文) 学科 化学
关键词 MONTE Carlo STEADY State TEMPERATURE DEPENDENCE DOPING DEPENDENCE
年,卷(期) 2011,(11) 所属期刊栏目
研究方向 页码范围 1324-1330
页数 7页 分类号 O6
字数 语种
DOI
五维指标
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MONTE
Carlo
STEADY
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TEMPERATURE
DEPENDENCE
DOPING
DEPENDENCE
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期刊影响力
现代物理(英文)
月刊
2153-1196
武汉市江夏区汤逊湖北路38号光谷总部空间
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1826
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