Sn doped ZnO thin films as high resistivity window layer for Cu(In,Ga)Se2 solar cells

• 来源期刊: 光电子快报（英文版）
• 年，卷（期）: 2020,（6）
• 所属期刊栏目: Materials
• 页码范围: 451-454
• 页数: 4页
• 语种: 英文
• DOI: 10.1007/s11801-020-0054-6

摘要

For high efficiency Cu(In,Ga)Se2 (CIGS) solar cell,the high-resistivity layer with high optical transmittance has to be adopted between the buffer layer and the high-conductivity window layer.In this paper,we propose Sn doped ZnO(ZTO) film,instead of the traditional intrinsic ZnO (i-ZnO) film,as an alternative n-type high-resistivity window layer for CIGS solar cell.In this experiment,both ZTO and i-ZnO films are strong (002) oriented,and the surface morphologies of the two films are almost the same.The statistical roughnesses of i-ZnO film and ZTO film are 0.58 nm and 0.63 nm,respectively.However,the optical transmittance of ZTO film is higher than that of i-ZnO film with the same thickness.The efficiency of ZTO based CIGS cell was 14.24％,which is almost the same as the efficiency of i-ZnO based CIGS cell.These results fully suggest that it is very feasible to replace i-ZnO with ZTO as the high resistant window layer.