Study of electrophysical properties of metal-semiconductor contact by the theory of complex systems

• 作者: L.K.Abdullayevat M.G.Hasanov Sh.G.Askerov
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2020,（10）
• 所属期刊栏目: ARTICLES
• 页码范围: 17-20
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/1674-4926/41/10/102101

摘要

The purpose of this work is to analyze the electrical properties of the metal-semiconductor contact (MSC) in the framework of the theory of complex systems.The effect of inhomogeneity of the different microstructures: polycrystalline,monocrystalline,amorphous metal-semiconductor contact surface is investigated,considering a Schottky diode (SD) as a parallel connection of numerous subdiodes.It has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system,which consists of parallel connected numerous elementary contacts having different properties and parameters.