Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

• 作者: Rui Zhou Cui Yu Chuangjie Zhou Jianchao Guo Zezhao He Yanfeng Wang Feng Qiu Hongxing Wang Shujun Cai Zhihong Feng
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2020,（12）
• 所属期刊栏目: ARTICLES
• 页码范围: 82-85
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/1674-4926/41/12/122801

摘要

In this work,we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra,pulsed Ⅰ-Ⅴ characteristics analysis,and radio frequency performances measurements.It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density.Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors.This work should be helpful for further performance improvement of the microwave power diamond devices.