Mobility enhancement techniques for Ge and GeSn MOSFETs

• 作者: Ran Cheng Zhuo Chen Sicong Yuan Mitsuru Takenaka Shinichi Takagi Genquan Han Rui Zhang
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2021,（2）
• 所属期刊栏目: REVIEWS
• 页码范围: 19-27
• 页数: 9页
• 语种: 英文
• DOI: 10.1088/1674-4926/42/2/023101

摘要

The performance enhancement of conventional Si MOSFETs through device scaling is becoming increasingly diffi-cult.The application of high mobility channel materials is one of the most promising solutions to overcome the bottleneck.The Ge and GeSn channels attract a lot of interest as the alternative channel materials,not only because of the high carrier mo-bility but also the superior compatibility with typical Si CMOS technology.In this paper,the recent progress of high mobility Ge and GeSn MOSFETs has been investigated,providing feasible approaches to improve the performance of Ge and GeSn devices for future CMOS technologies.