An Improved SOI CMOS Technology Based Circuit Technique for Effective Reduction of Standby Subthreshold Leakage

• 作者: Manish Kumar Md. Anwar Hussain Sajal K. Paul
• 来源期刊: 电路与系统(英文)
• 学科: 医学
• 关键词: STANDBY SUBTHRESHOLD LEAKAGE SOI Technology Low Power MULTI-THRESHOLD VOLTAGE STACK Effect Reverse Gate VOLTAGE
• 年，卷（期）: 2013,（6）
• 页码范围: 431-437
• 页数: 7页
• 分类号: R73

摘要

Silicon-on-insulator (SOI) CMOS technology is a very attractive option for implementing digital integrated circuits for low power applications. This paper presents migration of standby subthreshold leakage control technique from a bulk CMOS to SOI CMOS technology. An improved SOI CMOS technology based circuit technique for effective reduction of standby subthreshold leakage power dissipation is proposed in this paper. The proposed technique is validated through design and simulation of a one-bit full adder circuit at a temperature of 27℃, supply voltage, VDD of 0.90 V in 120 nm SOI CMOS technology. Existing standby subthreshold leakage control techniques in CMOS bulk technology are compared with the proposed technique in SOI CMOS technology. Both the proposed and existing techniques are also implemented in SOI CMOS technology and compared. Reduction in standby subthreshold leakage power dissipation by reduction factors of 54x and 45x foraone-bit full adder circuit was achieved using our proposed SOI CMOS technology based circuit technique in comparison with existing techniques such as MTCMOS technique and SCCMOS technique respectively in CMOS bulk technology. Dynamic power dissipation was also reduced significantly by using this proposed SOI CMOS technology based circuit technique. Standby subthreshold leakage power dissipation and dynamic power dissipation were also reduced significantly using the proposed circuit technique in comparison with other existing techniques, when all circuit techniques were implemented in SOI CMOS technology. All simulations were performed using Microwindver 3.1 EDA tool.