A Novel High Performance of GaN-Based HEMT with Two Channel Layers of GaN/InAlGaN

• 作者: Masoud Sabaghi Massoud Masoumi Reza Karami
• 来源期刊: 世界工程和技术(英文)
• 学科: 工学
• 关键词: MOLE FRACTION GaN/InAlGaN BREAKDOWN Voltage High Electron Mobility Transistor (HEMT)
• 年，卷（期）: 2017,（2）
• 页码范围: 324-332
• 页数: 9页
• 分类号: TN3

摘要

The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device performance focusing on the electrical potential, electron concentration, breakdown voltage and transconductance (gm). Also, the results have been compared with structure of AlGaN/GaN HEMT. Our simulation results reveal that the proposed structure increases electron concentration, breakdown voltage and transconductance;and reduces the leakage current. Also, the mole fraction of aluminum in the InAlGaN has been optimized to create the best performing device.