Bufferless Epitaxial Growth of GaAs on Step-Free Ge (001) Mesa

• 作者: Ding-Ming Huang Jie-Yin Zhang Jian-Huan Wang Wen-Qi Wei Zi-Hao Wang Ting Wang Jian-Jun Zhang
• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2021,（6）
• 所属期刊栏目: CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 97-101
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/0256-307X/38/6/068101

摘要

GaAs/Ge heterostructures have been employed in various semiconductor devices such as solar cells,high-performance CMOS transistors,and Ⅲ Ⅴ/Ⅳ heterogeneous optoelectronic devices.The performance of these devices is directly dependent on the material quality of the GaAs/Ge heterostructure,while the material quality of the epitaxial GaAs layer on the Ge is limited by issues such as the antiphase domain (APD),and stacking-fault pyramids(SFP).We investigate the epitaxial growth of high-quality GaAs on a Ge (001) mesa array,via molecular beam epitaxy.Following a systematic study of the Ge terrace via an in situ scanning tunneling microscope,an atomi-cally step-free terrace on the Ge mesa measuring up to 5 × 5 μm2 is obtained,under optimized growth conditions.The step-free terrace has a single-phase c (4 × 2) surface reconstruction.The deposition of a high-quality GaAs layer with no APD and SFP is then achieved on this step-free Ge terrace.High-resolution transmission electron microscopy and electron channel contrast image characterizations reveal the defect-free growth of the GaAs layer on the step-free Ge mesa.Furthermore,InAs quantum dots on this GaAs/Ge mesa reveal photoluminescent intensity comparable to that achieved on a GaAs substrate,which further confirms the high quality of the GaAs layer on Ge.