Effects of thickness on cubic GaN nucleation layers on GaAs（001） substrates

• 作者: X.H.Zheng X.M.Jiang
• 来源期刊: 北京同步辐射装置：英文版
• 学科: 化学
• 关键词: GaN 成核层 GAAS衬底
• 年，卷（期）: 2001,（1）
• 页码范围: 141-146
• 页数: 6页
• 分类号: O614.371

摘要

The effects of growth time on the structure and morphology of cubic GaN nucleation layers on GaAs(001)substrates by metalorganic chemical vapor deposition (MOCVD) have been investigated using a synchrotron X-ray diffraction(XRD).The XRD results show that the GaN 111 reflections at 54.75° inχ are a measurable component,however the 002 reflections parallel to GaAs(001) surface are not detected.The XRD Φ scans and pole figures give a convincing proof that the GaN nucleation latyers show exactly the cubic symmetrical structure.The coherence lengths along the close-packed<111> direction estuimated from the 111 peak are nanometer order of magnitude,The optimal photoluminescence (PL) spectrum was obtained from the cubic GaN epilayer deposited on the nucleation layer for 60sec.