Low-frequency noises in GaAs MESFET''s currents associated with substrate conductivity and channel-substrate junction

• 来源期刊: 科学通报(英文版)
• 学科: 工学
• 年，卷（期）: 2011,（12）
• 页码范围: 1272-1276
• 页数: 5页
• 分类号: TN386
• 语种: 中文

摘要

Low-frequency noises in GaAs MESFET are usually observed when investigating the drain current and substrate leakage current under sidegate bias conditions. Experimental results show that the magnitude of low-frequency noises is in a direct dependency upon the sidegate bias and the noises in drain current will disappear if sidegate bias increases more negatively beyond a certain voltage. A mechanism associated with the substrate conductivity and the channel-substrate junction modulated by sidegate bias is proposed to explain the fluctuation of low-frequency noises.