3-13 HRXRD Study of 6H-SiC Implanted With 300 keV He Ions

• 作者: Du Yangyang
• 来源期刊: 中国科学院近代物理研究所和兰州重离子研究装置年报：英文版
• 学科: 物理学
• 关键词: KEV HE IONS
• 年，卷（期）: 2014,（1）
• 页码范围: 103-104
• 页数: 2页
• 分类号: O4

摘要

In this paper, samples used are oriented 6H-SiC <0001> surface supplied by the MIT company. They were cutinto 10 mm10 mm10 mm in size. The 6H-SiC wafers were implanted with 300 keV He ions to a fluence of 11017cm?2 at 600?C. The implantation experiment was performed at the 320 kV Multi-discipline Research Platform for Highly Charged Ions of the Institute of Modern Physics,Chinese Academy of Sciences (CAS). The 300 keV Heions were implanted into 6H-SiC in vacuum (210?4Pa) and the current density was approximately 0.8A/cm2. After He implantation, the samples wereisochronally annealed at 750 and 1 200 ?C for 30 min,respectively, with the GSL1700X high-temperature vacuumsintering furnace in Ar atmosphere.