Dose Dependence of Nano-hardness of 6H-SiC Crystal under Irradiation with Inert Gas Ions

• 作者: Yang Yitao Zhang Chonghong
• 来源期刊: 中国科学院近代物理研究所和兰州重离子研究装置年报:英文版
• 学科: 工学
• 关键词: temperature. CRYSTAL DAMAGE
• 年，卷（期）: 2018,（1）
• 页码范围: 123-123
• 页数: 1页
• 分类号: TN3

摘要

Single crystal 6H-SiC was irradiated by inert gas ions(He,Ne,Kr and Xe ions)to various damage levels at room temperature.Nano-indentation test was performed to investigate the hardness change behavior with damage levels.The depth profile of nano-hardness for 6H-SiC decreased with increasing depth for both the pristine and irradiated samples,which was known as indentation size effect(ISE)[1].Nix-Gao model was proposed to determine an asymptotic value of nanohardness by taking account of ISE for both the pristine and irradiated samples[2].In this study,nano-hardness of the irradiated samples showed a strong dependence on damage level and showed a weak dependence on ions species,as shown in Fig.1.From the dependence of hardness on damage,it was found that the change of hardness demonstrated three distinguishable stages with damage。