Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height

• 作者: ABU BASHAR MOHAMMAD HAMIDUL ISLAM JAE HYEOK LEE JOON SEOP KWAK TAE KYOUNG KIM YU-JUNG CHA
• 来源期刊: 光子学研究:英文版
• 学科: 工学
• 关键词: OPTOELECTRONIC Schottky diodes
• 年，卷（期）: 2020,（6）
• 页码范围: 1049-1058
• 页数: 10页
• 分类号: TN3

摘要

The ffect of tin-oxide(SnO)nanoparticles,which are obtained by indium-tin-oxide(ITO)treatment,on the p-GaN surface of GaN-based flip-chip blue micro-light-emitting diode(μ-LED)arrays is investigated.A thin Ag layer is deposited on the ITO-treated p-GaN surface by sputtering.SnO nanoparticles originate from inho-mogencous Schottly barrier heights(SBHs)at Ag/p-GaN contact.Therefore,efective SBH is reduced,which causes carrier transport into theμ-LED to enhance.10 nm thick ITO-treatedμ-LEDs show better optoelectronic characteristics among fabricated u-LEDs owing to improved ohmic contact and highly reflective p-type reflectors.Basically,SnO nanoparticles help to make good ohmic contact,which results in improved carrier transport intoμ-LEDs and thus results in increased optoelectronic performances.