A 0.5-3.0 GHz SP4T RF switch with improved body self-biasing technique in 130-nm SOI CMOS

• 作者: Fujiang Lin Hao Zhang Jiahui Shi Qiangsheng Cui Xu Yan
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2020,（10）
• 所属期刊栏目: ARTICLES
• 页码范围: 67-73
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-4926/41/10/102404

摘要

A single-pole four-throw (SP4T) RF switch with charge-pump-based controller is designed and implemented in a commercial 130-nm silicon-on-insulator (SOI) CMOS process.An improved body self-biasing technique based on diodes is utilized to simplify the controlling circuitry and improve the linearity.A multistack field-effect-transistor (FET) structure with body floating technique is employed to provide good power-handling capability.The proposed design demonstrates a measured input 0.1-dB compression point of 38.5 dBm at 1.9 GHz,an insertion loss of 0.27 dB/0.33 dB and an isolation of 35 dB/27 dB at 900 MHz/1.9 GHz,respectively.The overall chip area is only 0.49 mm2.This RF switch can be used in GSM/WCDMA/LTE frontend modules.