RF performance evaluation of p-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET

• 作者: Narendra Yadava Shivangi Mani R.K.Chauhan
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2020,（12）
• 所属期刊栏目: ARTICLES
• 页码范围: 94-99
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-4926/41/12/122803

摘要

The radio-frequency (RF) performance of the p-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET has been evaluated.The key figure of merits (FOMs) for device performance evaluation include the transconductance(gm) gate dependent intrinsic-capacitances (Cgd and Cgs),cutoff frequency (fT),gain bandwidth (GBW) product and output-conductance (gd).Similarly,power-gain (Gp),power added efficiency (PAE),and output power (PouT) are also investigated for large-signal continuous-wave (CW) RF performance evaluation.The motive behind the study is to improve the β-Ga2O3 MOS device performance along with a reduction in power losses and device associated leakages.To show the applicability of the designed device in RF applications,its RF FOMs are analyzed.With the outline characteristics of the ultrathin black phosphorous layer below the β-Ga2O3 channel region,the proposed device results in 1.09 times improvement in fT,with 0.7 times lower Cgs,and 3.27 dB improved GP in comparison to the NiO-GO MOSFET.The results indicate that the designed NiO-GO/BP MOSFET has better RF performance with improved power gain and low leakages.