Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness

• 作者: Jie Xu Nai-Long He Hai-Lian Liang Sen Zhang Yu-De Jiang Xiao-Feng Gu
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（6）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
• 页码范围: 587-592
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/abdda7

摘要

A novel terminal-optimized triple RESURF LDMOS (TOTR-LDMOS) is proposed and verified in a 0.25-μm bipolar-CMOS-DMOS (BCD) process.By introducing a low concentration region to the terminal region,the surface electric field of the TOTR-LDMOS decreases,helping to improve the breakdown voltage (BV) and electrostatic discharge (ESD) robust-ness.Both traditional LDMOS and TOTR-LDMOS are fabricated and investigated by transmission line pulse (TLP) tests,direct current (DC) tests,and TCAD simulations.The results show that comparing with the traditional LDMOS,the BV of the TOTR-LDMOS increases from 755 V to 817 V without affecting the specific on-resistance (Ron,sp) of 6.99 Ω·mm2.Meanwhile,the ESD robustness of the TOTR-LDMOS increases by 147％.The TOTR-LDMOS exhibits an excellent performance among the present 700-V LDMOS devices.