FTIR Study of C-implanted 4H-SiC Single Crystal after Swift Pb-ion Irradiation

• 作者: Zhou Lihong Zhang Chonghong Song Yin Yang Yitao
• 来源期刊: 近代物理研究所和兰州重离子加速器实验室年报：英文版
• 学科: 化学
• 关键词: SIC单晶 红外光谱 离子辐照 小时 植入 电子设备 特殊性质 漂移速度
• 年，卷（期）: 2005,（1）
• 页码范围: 66
• 页数: 1页
• 分类号: O657.33

摘要

<正>Due to its extraordinary properties, such as wide band gap, high electronic drift velocity, high electric breakdown field,and excellent chemical and thermal stability, silicon carbide has been of technical importance for high temperature, high frequency, and high power electronic devices and is attracting more attention. In device processing ion implantation is an important technological procedure. But the implantation