3-25 An Investigation on Raman Spectra of He+-implanted and Post-implantation-annealed 4H-SiC

• 作者: Liu Juan Song Yin Xian Yongqiang Yang Yitao Zhang Chonghong Zhang Liqing
• 来源期刊: 中国科学院近代物理研究所和兰州重离子研究装置年报：英文版
• 学科: 物理学
• 关键词: INVESTIGATION SPECTRA Raman
• 年，卷（期）: 2014,（1）
• 页码范围: 120-120
• 页数: 1页
• 分类号: O4

摘要

Silicon carbide fiber/silicon carbide matrix (SiCf/SiC) composites are of interest as a fuel cladding and structuralmaterial in designs of advanced nuclear reactor due to their superior thermo-mechanical properties and stabilitiesand low cross-section for neutron capture under the severe service environment including high temperature andhigh energy neutron bombardment. SiCf/SiC compositions consists of SiC fiber and SiC matrix which exist inwell over 100 polymorphs dependent on the varied stacking of Si-C close-packed atomic planes, 2H-SiC, 4H-SiC,6H-SiC, 3C-SiC, 15R-SiC, etc. Energetic He atoms can be created and accumulated via nuclear reactions. He atomsagglomerate and coarsen into He bubbles and can deteriorate structural properties by inducing crack and creep. Inthis experiment, the damage of n-type 4H-SiC wafers (research standard, supplied by the Cree Research Inc.) with athickness of 0.38 mm implanted with 100 keV He+ to a fluence of 31016 He+/cm2 and post- implantation-annealedbehavior at different temperature were studied using Raman scattering spectroscopy.