A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure

• 作者: Chenxia Wang Diao Fan Jie Wei Xiaorong Luo Yang Yang
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2020,（10）
• 所属期刊栏目: ARTICLES
• 页码范围: 53-58
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-4926/41/10/102402

摘要

A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation.The proposed device features an embedded NPN structure at the anode side,and double trenches together with an N-type carrier storage (N-CS) layer at the cathode side,named DT-NPN LIGBT.The NPN structure not only acts as an electron barrier to eliminate the snapback effect in the on-state within a smaller cell pitch but also provides an extra electron extracting path during the turn-off stage to decrease the turnoff loss (Eoff).The double cathode trenches and N-CS layer hinder the hole from being extracted by the cathode quickly.They then enhance carrier storing effect and lead to a reduced on-state voltage drop (Von).The latch-up immunity is improved by the double cathode trenches.Hence,the DT-NPN LIGBT obtains a superior tradeoff between the Von and Eoff.Additionally,the DT-NPN LIGBT exhibits an improved blocking capability and weak dependence of breakdown voltage (BV) on the P+ anode doping concentration because the NPN structure suppresses triggering the PNP transistor.The proposed LIGBT reduces the Eoff by 55％ at the same Von,and improves the BV by 7.3％ compared to the conventional LIGBT.