Modelling and fabrication of wide temperature range Al0.24Ga0.76As/GaAs Hall magnetic sensors

• 作者: Hua Fan Huichao Yue Jiangmin Mao Ting Peng Siming Zuo Quanyuan Feng Qi Wei Hadi Heidari
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2022,（3）
• 所属期刊栏目: ARTICLES
• 页码范围: 87-93
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-4926/43/3/034101

摘要

Silicon Hall-effect sensors have been widely used in industry and research fields due to their straightforward fabrica-tion process and CMOS compatibility.However,as their material property limitations,technicians usually implement complex CMOS circuits to improve the sensors'performance including temperature drift and offset compensation for fitting tough situ-ation,but it is no doubt that it increases the design complexity and the sensor area.Gallium arsenide(GaAs)is a superior materi-al of Hall-effect device because of its large mobility and stable temperature characteristics.Concerning there is no specified mod-elling of GaAs Hall-effect device,this paper investigated its modelling by using finite element method(FEM)software Silvaco TCAD·to help and guide GaAs Hall-effect device fabrication.The modeled sensor has been fabricated and its experimental res-ults are in agreement with the simulation results.Comparing to our previous silicon Hall-effect sensor,the GaAs Hall-effect sensor demonstrates potential and reliable benchmark for the future Hall magnetic sensor developments.