Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots

• 作者: Dandan Ning Yanan Chen Xinkun Li Dechun Liang Shufang Ma Peng Jin Zhanguo Wang
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2020,（12）
• 所属期刊栏目: ARTICLES
• 页码范围: 1-6
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-4926/41/12/122101

摘要

Photoluminescence (PL) test was conducted to investigate the effect of rapid thermal annealing (RTA) on the optical performance of self-assembled InAs/GaAs quantum dots (QDs) at the temperatures of 16 and 300 K.It was found that after RTA treatment,the PL spectrum of the QDs sample had a large blue-shift and significantly broadened at 300 K.Compared with the as-grown InAs QDs sample,the PL spectral width has increased by 44.68 meV in the InAs QDs sample RTA-treated at 800 ℃.The excitation power-dependent PL measurements showed that the broadening of the PL peaks of the RTA-treated InAs QDs should be related to the emission of the ground state (GS) of different-sized InAs QDs,the InAs wetting layer (WL)and the In0.15Ga0.85As strain reduction layer (SRL) in the epitaxial InAs/GaAs layers.