Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers

• 作者: Tianyi Tang Tian Yu Guanqing Yang Jiaqian Sun Wenkang Zhan Bo Xu Chao Zhao Zhanguo Wang
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2022,（1）
• 所属期刊栏目: ARTICLES
• 页码范围: 55-61
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-4926/43/1/012301

摘要

InAs/GaAs quantum dot (QD) lasers were grown on silicon substrates using a thin Ge buffer and three-step growth method in the molecular beam epitaxy (MBE) system.In addition,strained superlattices were used to prevent threading disloca-tions from propagating to the active region of the laser.The as-grown material quality was characterized by the transmission electron microscope,scanning electron microscope,X-ray diffraction,atomic force microscope,and photoluminescence spectro-scopy.The results show that a high-quality GaAs buffer with few dislocations was obtained by the growth scheme we de-veloped.A broad-area edge-emitting laser was also fabricated.The O-band laser exhibited a threshold current density of 540 A/cm2 at room temperature under continuous wave conditions.This work demonstrates the potential of large-scale and low-cost manufacturing of the O-band InAs/GaAs quantum dot lasers on silicon substrates.