Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

• 作者: Lan Bi Yixu Yao Qimeng Jiang Sen Huang Xinhua Wang Hao Jin Xinyue Dai Zhengyuan Xu Jie Fan Haibo Yin Ke Wei Xinyu Liu
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2022,（3）
• 所属期刊栏目: ARTICLES
• 页码范围: 73-76
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/1674-4926/43/3/032801

摘要

Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode(E-mode)GaN-based power device,were investigated by frequency/voltage-dependent capacitance-voltage and inductive-load switching measure-ments.The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gate-drain capacitance characteristic curves.Frequency-and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiNx passivation dielectric.Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.