High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD

• 作者: Xiujun Hao Yan Teng He Zhu Jiafeng Liu Hong Zhu Yunlong Huai Meng Li Baile Chen Yong Huang Hui Yang
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2022,（1）
• 所属期刊栏目: ARTICLES
• 页码范围: 69-72
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/1674-4926/43/1/012303

摘要

We demonstrate a high-operating-temperature (HOT) mid-wavelength InAs/GaSb superlattice heterojunction in-frared photodetector grown by metal-organic chemical vapor deposition.High crystalline quality and the near-zero lattice mis-match of a InAs/GaSb superlattice on an InAs substrate were evidenced by high-resolution X-ray diffraction.At a bias voltage of-0.1 V and an operating temperature of 200 K,the device exhibited a 50％ cutoff wavelength of ～ 4.9 μm,a dark current dens-ity of 0.012 A/cm2,and a peak specific detectivity of 2.3 × 109 cm.Hz1/2/W.